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| (R) BUL742 HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR s s s s s HIGH VOLTAGE CAPABILITY LOW SPREAD OF DYNAMIC PARAMETERS MINIMUM LOT-TO-LOT SPREAD FOR RELIABLE OPERATION VERY HIGH SWITCHING SPEED LARGE RBSOA 3 1 2 APPLICATIONS ELECTRONIC BALLAST FOR FLUORESCENT LIGHTING s SWITCH MODE POWER SUPPLIES s DESCRIPTION The BUL742 is manufactured using high voltage Multi Epitaxial Planar technology for high switching speeds and high voltage capability. It uses a Cellular Emitter structure with planar edge termination to enhance switching speeds while maintening the wide RBSOA. Thanks to an increased intermediate layer, it has an intrinsic ruggedness which enables the transistor to withstand an high collector current level during breakdown condition, without using the transil protection usually necessary in typical converters for lamp ballast. TO-220 INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol V CES V CEO V EBO IC I CM IB I BM P tot T stg Tj June 2001 Parameter Collector-Emitter Voltage (V BE = 0) Collector-Emitter Voltage (I B = 0) Emitter-Base Voltage (I C = 0, I B = 0.75 A, t p < 10s, T j < 150 o C) Collector Current Collector Peak Current (t p <5 ms) Base Current Base Peak Current (t p <5 ms) Total Dissipation at Tc = 25 C Storage Temperature Max. Operating Junction Temperature o Value 900 400 BV EBO 4 8 2 4 70 -65 to 150 150 Unit V V V A A A A W o o C C 1/5 BUL742 THERMAL DATA R thj-case R thj-amb Thermal Resistance Junction-Case Thermal Resistance Junction-Ambient Max Max 1.78 62.5 o o C/W C/W ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) Symbol I CES Parameter Collector Cut-off Current (V BE = 0) Test Conditions V CE = 900 V I C = 100 mA L = 25 mH 400 Min. Typ. Max. 100 Unit A V V CEO(sus) Collector-Emitter Sustaining Voltage (I B = 0) BV EBO Emitter-Base Breakdown Voltage (I C = 0) Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage DC Current Gain RESISTIVE LOAD Storage Time Fall Time Avalanche Energy I E = 1 mA 12 V V CE(sat) IC = 1 A IC = 2 A IC = 4 A IC = 2 A I C = 250 mA IC = 2 A V CC = 125 V I B1 = 45 mA t p = 300 s L = 2 mH I B = 0.2 A I B = 0.4 A I B = 0.8 A I B = 0.4 A V CE = 5 V V CE = 5 V I C = 0.5 A I B2 = -45 mA 6 35 10 11 250 0.5 1.0 1.5 1.5 70 35 V V V V V BE(sat) h FE ts tf E sb s ns mJ Pulsed: Pulse duration = 300 s, duty cycle 1.5 % Energy Rating Test Circuit 2/5 BUL742 Safe Operating Areas Derating Curve Reverse Biased SOA 3/5 BUL742 TO-220 MECHANICAL DATA DIM. A C D E F F1 F2 G G1 H2 L2 L4 L5 L6 L7 L9 M DIA. 3.75 13.00 2.65 15.25 6.20 3.50 2.60 3.85 0.147 mm MIN. 4.40 1.23 2.40 0.49 0.61 1.14 1.14 4.95 2.40 10.00 16.40 14.00 2.95 15.75 6.60 3.93 0.511 0.104 0.600 0.244 0.137 0.102 0.151 TYP. MAX. 4.60 1.32 2.72 0.70 0.88 1.70 1.70 5.15 2.70 10.40 MIN. 0.173 0.048 0.094 0.019 0.024 0.044 0.044 0.194 0.094 0.394 0.645 0.551 0.116 0.620 0.260 0.154 inch TYP. MAX. 0.181 0.052 0.107 0.027 0.034 0.067 0.067 0.202 0.106 0.409 P011CI 4/5 BUL742 Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a trademark of STMicroelectronics (c) 2001 STMicroelectronics - Printed in Italy - All Rights Reserved STMicroelectronics GROUP OF COMPANIES Australia - Brazil - China - Finland - France - Germany - Hong Kong - India - Italy - Japan - Malaysia - Malta - Morocco Singapore - Spain - Sweden - Switzerland - United Kingdom - U.S.A. http://www.st.com 5/5 |
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